GaN transistor modeling for RF and power electronics : using the ASM-HEMT model /

Bibliographic Details
Corporate Author:	ScienceDirect (Online service)
Other Authors:	Chauhan, Togesh Singh
Format:	eBook
Language:	English
Published:	Cambridge : Woodhead Publishing, 2024.
Series:	Woodhead Publishing series in electronic and optical materials
Subjects:	Transistors > Materials > Simulation methods. Gallium nitride. Transistors > Matériaux > Méthodes de simulation. Nitrure de gallium. Electronic books.
Online Access:	Connect to the full text of this electronic book

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