| Tag |
First Indicator |
Second Indicator |
Subfields |
| LEADER |
00000cam a2200000 i 4500 |
| 001 |
in00005769737 |
| 005 |
20260327172334.1 |
| 006 |
m o d |
| 007 |
cr cnu---unuuu |
| 008 |
220526s2022 ne o 000 0 eng d |
| 040 |
|
|
|a OPELS
|b eng
|e rda
|e pn
|c OPELS
|d UKMGB
|d OCLCF
|d N$T
|d UKAHL
|d OCLCQ
|d OCLCO
|d OCLCL
|d OCLCQ
|d SFB
|d OCLCO
|d OCLCQ
|d OCLCL
|
| 015 |
|
|
|a GBC266767
|2 bnb
|
| 016 |
7 |
|
|a 020552614
|2 Uk
|
| 020 |
|
|
|a 0323996035
|
| 020 |
|
|
|a 9780323996037
|q (electronic bk.)
|
| 020 |
|
|
|z 9780323996020
|q (print)
|
| 035 |
|
|
|a (OCoLC)1320852579
|
| 037 |
|
|
|a 9780323996037
|b Ingram Content Group
|
| 050 |
|
4 |
|a TK7874.893
|
| 082 |
0 |
4 |
|a 621.3815
|2 23
|
| 049 |
|
|
|a TXAM
|
| 100 |
1 |
|
|a Ma, Shenglin,
|e author.
|
| 245 |
1 |
0 |
|a TSV 3D RF integration :
|b high resistivity Si interposer technology /
|c Shenglin Ma and Yufeng Jin.
|
| 264 |
|
1 |
|a Amsterdam, Netherlands :
|b Elsevier,
|c 2022.
|
| 300 |
|
|
|a 1 online resource.
|
| 336 |
|
|
|a text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a computer
|b c
|2 rdamedia
|
| 338 |
|
|
|a online resource
|b cr
|2 rdacarrier
|
| 588 |
0 |
|
|a Print version record.
|
| 520 |
|
|
|a TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.
|
| 650 |
|
0 |
|a Three-dimensional integrated circuits.
|
| 650 |
|
0 |
|a Silicon
|x Electric properties.
|
| 650 |
|
0 |
|a Radio frequency integrated circuits.
|
| 650 |
|
6 |
|a Circuits intégrés tridimensionnels.
|
| 650 |
|
6 |
|a Circuits intégrés à radiofréquence.
|
| 650 |
|
7 |
|a Radio frequency integrated circuits
|2 fast
|
| 650 |
|
7 |
|a Silicon
|x Electric properties
|2 fast
|
| 650 |
|
7 |
|a Three-dimensional integrated circuits
|2 fast
|
| 655 |
|
7 |
|a Electronic books.
|2 local
|
| 700 |
1 |
|
|a Jin, Yufeng,
|e author.
|1 https://id.oclc.org/worldcat/entity/E39PCjrwYbD6cgqjgYcxH8QxwC
|
| 710 |
2 |
|
|a ScienceDirect (Online service)
|
| 758 |
|
|
|i has work:
|a TSV 3D RF INTEGRATION (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCXm899V9bJVRgQ9DxrRYfq
|4 https://id.oclc.org/worldcat/ontology/hasWork
|
| 776 |
0 |
8 |
|i Print version:
|a MA, SHENGLIN. JIN, YUFENG.
|t TSV 3D RF INTEGRATION.
|d [S.l.] : ELSEVIER - HEALTH SCIENCE, 2022
|z 0323996027
|w (OCoLC)1280275881
|
| 856 |
4 |
0 |
|u http://proxy.library.tamu.edu/login?url=https://www.sciencedirect.com/science/book/9780323996020
|z Connect to the full text of this electronic book
|t 0
|
| 955 |
|
|
|a Elsevier ScienceDirect 2026-2027
|
| 994 |
|
|
|a 92
|b TXA
|
| 999 |
f |
f |
|i 2b21c793-ae07-404b-9941-dcd420843c7a
|s 003d7b8d-2d4d-4b44-8af9-d168b884bf43
|t 0
|
| 952 |
f |
f |
|a Texas A&M University
|b College Station
|c Electronic Resources
|s www_evans
|d Available Online
|t 0
|e TK7874.893
|h Library of Congress classification
|
| 998 |
f |
f |
|a TK7874.893
|t 0
|l Available Online
|