1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /
1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750°C. This book discusses the pote...
| Corporate Authors: | , |
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| Format: | Conference Proceeding eBook |
| Language: | English French German |
| Published: |
Oxford :
Pergamon Press,
1967.
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| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
| Summary: | 1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750°C. This book discusses the potential advantages of the technique and the mechanism of the epitaxial growth process. Organized into four sessions encompassing 42 chapters, this volume starts with an overview of the exact influence of the thin alloy layer. This text then describes the novel X-ray method and its application to semic. |
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| Item Description: | Added title pages in French and German. Papers in English, French or German. |
| Physical Description: | 1 online resource |
| ISBN: | 9781483156309 1483156303 |