1965 transactions of the third International Vacuum Congress, 28 June-2 July 1965, Stuttgart, Germany. Volume 2, Part II, Sessions 5-8 /

1965 Transactions of the Third International Vacuum Congress, Volume 2 presents the methods for the epitaxial growth of silicon, which makes use of an ultra-thin layer of a silicon alloy on the substrate surface to develop epitaxial layers at temperature as low as 750°C. This book discusses the pote...

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Bibliographic Details

Corporate Authors:	International Vacuum Congress Stuttgart, Germany, ScienceDirect (Online service)
Other Authors:	Adam, Hans (Editor)
Format:	Conference Proceeding eBook
Language:	English French German
Published:	Oxford : Pergamon Press, 1967.
Subjects:	Vacuum technology > Congresses. Vide (Technologie) > Congrès. TECHNOLOGY & ENGINEERING > Mechanical. Vacuum technology Electronic books. Congress proceedings (reports) Conference papers and proceedings Conference papers and proceedings. Actes de congrès.
Online Access:	Connect to the full text of this electronic book