Oxygen in silicon /

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions,...

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Bibliographic Details
Corporate Author: ScienceDirect (Online service)
Other Authors: Shimura, Fumio
Format: eBook
Language:English
Published: Boston : Academic Press, Inc., ©1994.
Series:Semiconductors and semimetals ; v. 42.
Subjects:
Online Access:Connect to the full text of this electronic book
Description
Summary:This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals f.
Physical Description:1 online resource (xvi, 679 pages) : illustrations
Format:Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
Bibliography:Includes bibliographical references and index.
ISBN:9780080864396
0080864392
1281514233
9781281514233