Silicon molecular beam epitaxy : proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989 /

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase e...

Full description

Bibliographic Details
Corporate Authors: International Symposium on Silicon Molecular Beam Epitaxy Strasbourg, France, ScienceDirect (Online service), European Materials Research Society
Other Authors: Kasper, Erich, Parker, E. H. C.
Format: Conference Proceeding eBook
Language:English
Published: Amsterdam ; New York : New York, NY, USA : North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1989-<1990>
Series:European Materials Research Society symposia proceedings ; v. 10.
Subjects:
Online Access:Connect to the full text of this electronic book

Internet

Connect to the full text of this electronic book

Available Online

Holdings details from Available Online
Call Number: QC611.6.M64 I58 1989
 
Call Number Status Get It
QC611.6.M64 I58 1989 Available