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Silicon-Germanium Strained Layers and Heterostructures /

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new unders...

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Bibliographic Details
Corporate Author: ScienceDirect (Online service)
Other Authors: Jain, S. C. (Suresh C.), 1926- (Editor), Willander, M. (Editor)
Format: eBook
Language:English
Language Notes:Text in English.
Published: San Diego, CA ; London : Academic, 2003.
Edition:[Second edition].
Series:Semiconductors and semimetals ; v. 74.
Subjects:
Compound semiconductors.
Layer structure (Solids)
Heterostructures.
Germanium.
Silicon.
Germanium
Silicon
Composés semi-conducteurs.
Structure cristalline (Solides)
Hétérostructures.
Silicium.
germanium.
silicon.
Compound semiconductors
Heterostructures
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Call Number: QC610.9 .W54 v.74eb
 
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