Instabilities in silicon devices. Volume 3, New insulators, devices and radiation effects /

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still...

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Bibliographic Details
Corporate Author: ScienceDirect (Online service)
Other Authors: Vapaille, André, 1933- (Editor), Barbottin, Gérard, 1946- (Editor)
Format: eBook
Language:English
Language Notes:English text with abstracts in French and German.
Published: 1999.
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Call Number: TK7871.15.S55 I57 1999
 
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