Measurement and modeling of silicon heterostructure devices /

When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. S...

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Bibliographic Details
Corporate Author:	Taylor & Francis
Other Authors:	Cressler, John D.
Format:	eBook
Language:	English
Published:	Boca Raton, FL : CRC Press, ©2008.
Subjects:	Bipolar transistors > Mathematical models. Bipolar transistors. Heterostructures. Integrated circuits > Design and construction. Transistors bipolaires > Modèles mathématiques. Transistors bipolaires. Hétérostructures. Circuits intégrés > Conception et construction. Bipolar transistors Bipolar transistors > Mathematical models Heterostructures Integrated circuits > Design and construction Electronic books.
Online Access:	Connect to the full text of this electronic book

Table of Contents:

Chapter 001 Best-Practice AC Measurement Techniques ... 4-
chapter 002 A Brief History of the Field
chapter 003 Overview: Measurement and Modeling
chapter 004 Best-Practice AC Measurement Techniques
chapter 005 Industrial Application of TCAD for SiGe Development
chapter 006 Compact Modeling of SiGe HBTs: HICUM
chapter 007 Compact Modeling of SiGe HBTs: Mextram
chapter 008 CAD Tools and Design Kits
chapter 009 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
chapter 010 Transmission Lines on Si
chapter 011 Improved De-Embedding Techniques.