Measurement and modeling of silicon heterostructure devices /

When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. S...

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Bibliographic Details
Corporate Author:	Taylor & Francis
Other Authors:	Cressler, John D.
Format:	eBook
Language:	English
Published:	Boca Raton, FL : CRC Press, ©2008.
Subjects:	Bipolar transistors > Mathematical models. Bipolar transistors. Heterostructures. Integrated circuits > Design and construction. Transistors bipolaires > Modèles mathématiques. Transistors bipolaires. Hétérostructures. Circuits intégrés > Conception et construction. Bipolar transistors Bipolar transistors > Mathematical models Heterostructures Integrated circuits > Design and construction Electronic books.
Online Access:	Connect to the full text of this electronic book

Description
Summary:	When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit.
Physical Description:	1 online resource (200 pages) : illustrations
Bibliography:	Includes bibliographical references and index.
ISBN:	9781420066937 1420066935 9781315218878 1315218879 9781351826075 1351826077