Advanced indium arsenide-based HEMT architectures for terahertz applications /

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characteriz...

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Bibliographic Details
Corporate Author:	Taylor & Francis
Other Authors:	Mohankumar, N. (Editor)
Format:	eBook
Language:	English
Published:	Boca Raton, FL : CRC Press, 2022.
Edition:	First edition.
Subjects:	Modulation-doped field-effect transistors. Indium arsenide. Semiconductors. Terahertz technology. Transistors HEMT. Arséniure d'indium. Semi-conducteurs. Technologie térahertz. semiconductor. SCIENCE > Physics. TECHNOLOGY > Electricity. TECHNOLOGY > Electronics > Circuits > General. Indium arsenide Modulation-doped field-effect transistors Semiconductors Terahertz technology Electronic books.
Online Access:	Connect to the full text of this electronic book

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Summary:	High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Physical Description:	1 online resource
ISBN:	9781000454550 100045455X 9781000454567 1000454568 9781003093428 1003093426