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Advanced indium arsenide-based HEMT architectures for terahertz applications /

High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characteriz...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Mohankumar, N. (Editor)
Format: eBook
Language:English
Published: Boca Raton, FL : CRC Press, 2022.
Edition:First edition.
Subjects:
Modulation-doped field-effect transistors.
Indium arsenide.
Semiconductors.
Terahertz technology.
Transistors HEMT.
Arséniure d'indium.
Semi-conducteurs.
Technologie térahertz.
semiconductor.
SCIENCE > Physics.
TECHNOLOGY > Electricity.
TECHNOLOGY > Electronics > Circuits > General.
Indium arsenide
Modulation-doped field-effect transistors
Semiconductors
Terahertz technology
Electronic books.
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Call Number: TK7871.95 .A38 2022
 
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