Gallium nitride power devices /

"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be d...

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Bibliographic Details

Corporate Author:	Taylor & Francis
Other Authors:	Yu, Hongyu, 1976- (Editor), Duan, Tianli (Editor)
Format:	eBook
Language:	English
Published:	Singapore : Pan Stanford Publishing, 2017.
Subjects:	Power electronics. Gallium nitride > Electric properties. Semiconductors. Gallium nitride. Semiconductors Nitrure de gallium. Électronique de puissance. Semi-conducteurs. semiconductor. TECHNOLOGY & ENGINEERING > Mechanical. Gallium nitride Gallium nitride > Electric properties Power electronics Electronic books.
Online Access:	Connect to the full text of this electronic book