Strain-engineered MOSFETs /

"This book brings together new developments in the area of spin-engineered MOSFETs using high-mobility substrates such as SIGe, strained-Si, germanium-on-insulator, and III-V semiconductors. The authors cover the materials aspects, principles, design, fabrication, and applications of advanced d...

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Bibliographic Details

Main Author:	Maiti, C. K.
Corporate Author:	Taylor & Francis
Other Authors:	Maiti, T. K.
Format:	eBook
Language:	English
Published:	Boca Raton, FL : CRC Press, ©2013.
Subjects:	Metal oxide semiconductor field-effect transistors > Reliability. Integrated circuits > Fault tolerance. Strains and stresses. Transistors MOSFET > Fiabilité. Circuits intégrés > Tolérance aux fautes. Contraintes (Mécanique) strain. stress. Integrated circuits > Fault tolerance Strains and stresses Electronic books.
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