Strained-Si heterostructure field effect devices /
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect...
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| Other Authors: | , |
| Format: | eBook |
| Language: | English |
| Language Notes: | English. |
| Published: |
Boca Raton :
CRC Press,
Ã2007.
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| Series: | Series in materials science and engineering.
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| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
| Summary: | A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS. After an introduction to the material. |
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| Physical Description: | 1 online resource (423 pages) : illustrations. |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 9780750309936 0750309938 0429145527 9780429145520 1420012347 9781420012347 |