Strained-Si heterostructure field effect devices /

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect...

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Bibliographic Details

Main Author:	Maiti, C. K.
Corporate Author:	Taylor & Francis
Other Authors:	Chattopadhyay, Swapan, 1952-, Bera, L. K.
Format:	eBook
Language:	English
Language Notes:	English.
Published:	Boca Raton : CRC Press, Ã2007.
Series:	Series in materials science and engineering.
Subjects:	Metal oxide semiconductor field-effect transistors. Silicon > Electric properties. Transistors MOSFET. Electronic books.
Online Access:	Connect to the full text of this electronic book