Cover Image

High-K gate dielectrics /

Show other versions (1)

IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by phot...

Full description

Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Houssa, Michel
Format: eBook
Language:English
Language Notes:English.
Published: Bristol ; Philadelphia : Institute of Physics, ©2004.
Series:Series in materials science and engineering.
Subjects:
Gate array circuits > Materials.
Metal oxide semiconductors > Materials.
Metal oxide semiconductors, Complementary > Materials.
Dielectrics > Research.
Dielectric devices.
Circuits prédiffusés > Matériaux.
MOS (Électronique) > Matériaux.
MOS complémentaires > Matériaux.
Dispositifs diélectriques.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Dielectric devices
Dielectrics > Research
Gate array circuits > Materials
Electronic books.
Online Access:Connect to the full text of this electronic book
Search Result 1
Cover Image
Published 2004
Book
Show all versions (2)