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High-K gate dielectrics /

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IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by phot...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Houssa, Michel
Format: eBook
Language:English
Language Notes:English.
Published: Bristol ; Philadelphia : Institute of Physics, ©2004.
Series:Series in materials science and engineering.
Subjects:
Gate array circuits > Materials.
Metal oxide semiconductors > Materials.
Metal oxide semiconductors, Complementary > Materials.
Dielectrics > Research.
Dielectric devices.
Circuits prédiffusés > Matériaux.
MOS (Électronique) > Matériaux.
MOS complémentaires > Matériaux.
Dispositifs diélectriques.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Dielectric devices
Dielectrics > Research
Gate array circuits > Materials
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Call Number: TK7871.99.M44 H49 2004
 
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TK7871.99.M44 H49 2004 Available