High-K gate dielectrics /
IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by phot...
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| Format: | eBook |
| Language: | English |
| Language Notes: | English. |
| Published: |
Bristol ; Philadelphia :
Institute of Physics,
©2004.
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| Series: | Series in materials science and engineering.
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| Online Access: | Connect to the full text of this electronic book |
| Summary: | IntroductionThe need for high-k gate dielectrics and materials requirementDeposition techniquesALCVD, MOCVD, PLD, MBECharacterizationPhysico-chemical characterizationX-ray and electron spectroscopiesOxygen diffusion and thermal stabilityDefect characterization by ESRBand alignment determined by photo-injectionElectrical characteristicsTheory of defects in high-k materialsBonding constraints and defect formation at Si/high-k interfacesBand alignment calculationsElectron mobility at the Si/high-k interfaceModel for defect generation during electrical stressTechnological aspectsDevice integration. |
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| Physical Description: | 1 online resource (xi, 601 pages) : illustrations |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 9781420034141 1420034146 1280650974 9781280650970 9786610650972 6610650977 1000687244 9781000687248 0429092881 9780429092886 |