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SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Cressler, John D.
Format: eBook
Language:English
Language Notes:English.
Published: Boca Raton : CRC Press, ©2008.
Subjects:
Bipolar transistors > Materials.
Heterostructures.
Silicon > Electric properties.
Epitaxy.
Transistors bipolaires > Matériaux.
Hétérostructures.
Épitaxie.
TECHNOLOGY & ENGINEERING > Electronics > Transistors.
Epitaxy
Heterostructures
Silicon > Electric properties
Electronic books.
Online Access:Connect to the full text of this electronic book
Description
Summary:What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the m
Physical Description:1 online resource (1 volume (various pagings)) : illustrations
Bibliography:Includes bibliographical references.
ISBN:1420066854
9781420066852
9781420066869
1420066862
1315218909
9781315218908