SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Cressler, John D.
Format: eBook
Language:English
Language Notes:English.
Published: Boca Raton : CRC Press, ©2008.
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Call Number: TK7871.96.B55 S53 2008
 
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