Introduction to magnetic random-access memory /

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durabil...

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Bibliographic Details
Other Authors: Dieny, B. (Bernard) (Editor), Goldfarb, Ronald Barry (Editor), Lee, Kyung-Jin (Editor)
Format: eBook
Language:English
Published: Piscataway, NJ : IEEE Press, [2017]
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Call Number: TK7895.M4 I62 2017eb
 
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