SiGe heterojunction bipolar transistors /

Remarkable developments in bipolar technology over the past decade have seen the silicongermanium heterojunction bipolar transistor (SiGe HBT) emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high-freque...

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Bibliographic Details

Main Author:	Ashburn, Peter
Format:	eBook
Language:	English
Published:	Chichester, West Sussex, England ; Hoboken, NJ : John Wiley, ©2003.
Subjects:	Bipolar transistors. Silicon. Germanium. Electronic books.
Online Access:	Connect to the full text of this electronic book