Description
Summary:The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride transistors: applications and vertical solutions; Module design and reliability; Switching cell design; Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability; and Prospects and outlooks in power electronics technology and market.
Physical Description:1 online resource (504 pages)
ISBN:9781785619182
DOI:10.1049/PBPO152E