Modern Power Electronic Devices : Physics, applications, and reliability /

The book contains 14 chapters. The following topics are dealt with: Power Electronics challenges; Junction diodes; Thyristors; Silicon MOSFETs; Silicon IGBTs; IGCTs; Silicon carbide diodes; SiC MOSFETs; GaN metal-insulator-semiconductor field-effect transistors; Gallium nitride transistors: applicat...

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Bibliographic Details
Other Authors:	Iannuzzo, Francesco (ed.)
Format:	eBook
Language:	English
Published:	Stevenage : IET, 2020.
Series:	Energy Engineering.
Subjects:	Electric resistance. Gallium compounds. Insulated gate bipolar transistors. Logic design. Semiconductors. Silicon. Silicon compounds. Thyristors. Wide gap semiconductors. circuit reliability. elemental semiconductors. gallium compounds. III-V semiconductors. insulated gate bipolar transistors. network synthesis. power MOSFET. power semiconductor diodes. silicon. silicon compounds. thyristors. wide band gap semiconductors. junction diodes thyristors silicon MOSFET silicon IGBT IGCT silicon carbide diodes metal-insulator-semiconductor field-effect transistors gallium nitride transistors module design module reliability switching cell design insulated gate bipolar transistor IGBT gate driving methods IGBT robustness IGBT reliability power electronics technology power electronics market Si SiC GaN Electronic books.
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