Nonlinear design : FETs and HEMTs /

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design. It is valid only in the static limit. When the voltages an...

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Bibliographic Details

Main Author:	Ladbrooke, Peter H. (Author)
Format:	Book
Language:	English
Published:	Boston : Artech House, [2022].
Series:	Artech House microwave library.
Subjects:	Field-effect transistors > Design and construction. Modulation-doped field-effect transistors > Design and construction.