Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications /

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

Full description

Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Park, Byung-Eun (Editor), Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Sakai, Shigeki (Editor), Yoon, Sung-Min (Editor)
Format: eBook
Language:English
Published: Singapore : Springer Singapore : Imprint: Springer, 2020.
Edition:2nd ed. 2020.
Series:Topics in Applied Physics, 131
Subjects:
Online Access:Connect to the full text of this electronic book

Internet

Connect to the full text of this electronic book

Available Online

Holdings details from Available Online
Call Number: TK7867-7867.5
 
Call Number Status Get It
TK7867-7867.5 Available