Characterization of Wide Bandgap Power Semiconductor Devices /

The book has 11 chapters and covers the following topics: Pulsed static characterization; Junction capacitance characterization; Fundamentals of dynamic characterization; Gate drive for dynamic characterization; Layout design and parasitic management; Protection design for double pulse test; Measure...

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Bibliographic Details
Main Author:	Wang, Fei (Fred)
Corporate Author:	Institution of Engineering and Technology
Other Authors:	Jones, Edward A., Zhang, Zheyu
Format:	eBook
Language:	English
Published:	Stevenage : IET, 2018.
Series:	Energy Engineering.
Subjects:	Electric capacity. Electronic apparatus and appliances. Power semiconductors. Semiconductors. Wide gap semiconductors. capacitance. network topology. power semiconductor devices. semiconductor device models. wide band gap semiconductors. cross-talk data processing double pulse test protection design dynamic characterization measurement gate drive junction capacitance characterization layout design parasitic management pulsed static characterization three-phase system topology wide bandgap power semiconductor devices
Online Access:	Connect to the full text of this electronic book

Description
Summary:	The book has 11 chapters and covers the following topics: Pulsed static characterization; Junction capacitance characterization; Fundamentals of dynamic characterization; Gate drive for dynamic characterization; Layout design and parasitic management; Protection design for double pulse test; Measurement and data processing for dynamic characterization; Cross-talk consideration; Impact of three-phase system; Topology consideration; and Appendices on Recommended equipment and components list for DPT setup; and Data processing code for dynamic characterization are given.
Physical Description:	1 online resource (376 pages)
ISBN:	9781785614927
DOI:	10.1049/PBPO128E