Characterization of Wide Bandgap Power Semiconductor Devices /

The book has 11 chapters and covers the following topics: Pulsed static characterization; Junction capacitance characterization; Fundamentals of dynamic characterization; Gate drive for dynamic characterization; Layout design and parasitic management; Protection design for double pulse test; Measure...

Full description

Bibliographic Details
Main Author:	Wang, Fei (Fred)
Corporate Author:	Institution of Engineering and Technology
Other Authors:	Jones, Edward A., Zhang, Zheyu
Format:	eBook
Language:	English
Published:	Stevenage : IET, 2018.
Series:	Energy Engineering.
Subjects:	Electric capacity. Electronic apparatus and appliances. Power semiconductors. Semiconductors. Wide gap semiconductors. capacitance. network topology. power semiconductor devices. semiconductor device models. wide band gap semiconductors. cross-talk data processing double pulse test protection design dynamic characterization measurement gate drive junction capacitance characterization layout design parasitic management pulsed static characterization three-phase system topology wide bandgap power semiconductor devices
Online Access:	Connect to the full text of this electronic book

Internet

Connect to the full text of this electronic book

Available Online

Holdings details from Available Online
Call Number	Status	Get It
Call Number:		QC611.8.W53 W364 2018

QC611.8.W53 W364 2018	Available