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Microwave integrated circuit amplifier designs submitted to Qorvo for fabrication with 0.09- U+00b5 m high-electron-mobility transistors (HEMTs) using 2-mil gallium nitride (GaN) on silicon carbide /

Bibliographic Details
Main Author: Penn, John E. (Author)
Format: Government Document eBook
Language:English
Published: Adelphi, MD : US Army Research Laboratory, March 2016.
Series:ARL-TN ; 0743.
Subjects:
Microwave integrated circuits > Design and construction.
Microwave amplifiers > Design and construction.
Technical reports.
Online Access:https://purl.fdlp.gov/GPO/gpo124339
Description
Item Description:"Mar 2016."
Physical Description:1 online resource (vi, 8 pages) : color illustrations.
Bibliography:Includes bibliographical references (page 6).