Microwave integrated circuit amplifier designs submitted to Qorvo for fabrication with 0.09- U+00b5 m high-electron-mobility transistors (HEMTs) using 2-mil gallium nitride (GaN) on silicon carbide /

Bibliographic Details
Main Author:	Penn, John E. (Author)
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : US Army Research Laboratory, March 2016.
Series:	ARL-TN ; 0743.
Subjects:	Microwave integrated circuits > Design and construction. Microwave amplifiers > Design and construction. Technical reports.
Online Access:	https://purl.fdlp.gov/GPO/gpo124339

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