Cover Image

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /

Bibliographic Details
Main Author: Schnabel, C. M. (Author)
Format: Government Document eBook
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
Series:NASA technical memorandum ; 2000-209648.
Subjects:
Correlation.
Synchrotrons.
Topography.
Beam currents.
Electron beams.
Schottky diodes.
Crystal defects.
Online Access:https://purl.fdlp.govGPO/gpo85917
Description
Item Description:"February 2000."
"Prepared for the 1999 International Conference on Silicon Carbide and Related Materials sponsored by North Carolina State University, Raleigh, North Carolina, October 10-15, 1999."
"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
Physical Description:1 online resource (4 pages) : illustrations.
Bibliography:Includes bibliographical references (page 4).