Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes /

Bibliographic Details

Main Author:	Schnabel, C. M. (Author)
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2000.
Series:	NASA technical memorandum ; 2000-209648.
Subjects:	Correlation. Synchrotrons. Topography. Beam currents. Electron beams. Schottky diodes. Crystal defects.
Online Access:	https://purl.fdlp.govGPO/gpo85917