Cover Image

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /

Show other versions (1)
Bibliographic Details
Main Author: Freeman, Jon C. (Author)
Format: Government Document eBook
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2003.
Series:NASA technical memorandum ; 2003-211983.
Subjects:
Gallium nitrides.
Field effect transistors.
High electron mobility transistors.
Online Access:https://purl.fdlp.gov/GPO/LPS42594
Description
Item Description:"February 2003."
"Performing organization: National Aeronautics and Space Administration, John H. Glenn Research Center at Lewis Field"--Report documentation page.
Physical Description:1 online resource (65 pages) : illustrations.
Bibliography:Includes bibliographical references (pages 62-65).