Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /

Bibliographic Details

Main Author:	Freeman, Jon C. (Author)
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2003.
Series:	NASA technical memorandum ; 2003-211983.
Subjects:	Gallium nitrides. Field effect transistors. High electron mobility transistors.
Online Access:	https://purl.fdlp.gov/GPO/LPS42594