Principles of lithography /
Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken p...
| Main Author: | |
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| Corporate Author: | |
| Format: | eBook |
| Language: | English |
| Published: |
Bellingham, Wash. (1000 20th St. Bellingham WA 98225-6705 USA) :
SPIE,
2005.
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| Edition: | 2nd ed. |
| Series: | SPIE monograph ;
PM146. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- 10. The limits of optical lithography
- 10.1 The diffraction limit
- 10.2 Improvements in optics
- 10.3 The shortest wavelength
- 10.4 Improved photoresists
- 10.5 Flatter wafers
- 10.6 How low can k1 go?
- 10.7 Immersion lithography and maximum numerical aperture
- 10.8 How far can optical lithography be extended?
- 10.9 Resist limits
- 10.10 Interferometric lithography
- Problems
- References.
- 11. Lithography costs
- 11.1 Cost of ownership
- 11.1.1 Capital costs
- 11.1.2 Consumables
- 11.1.3 Mask costs
- 11.1.4 Rework
- 11.1.5 Metrology
- 11.1.6 Maintenance costs
- 11.1.7 Labor costs
- 11.1.8 Facilities costs
- 11.2 Mix and match strategies
- Problems
- References.
- 12. Alternative lithography techniques
- 12.1 Proximity x-ray lithography
- 12.2 Extreme ultraviolet lithography - EUV
- 12.3 Electron-beam direct-write lithography
- 12.4 Electron-projection lithography - EPL
- 12.4.1 Small-field EPL systems
- 12.4.2 Large-field EPL systems
- 12.5 Ion-projection lithography - IPL
- 12.6 Imprint lithography
- 12.7 The ultimate future of lithography
- Problems
- References.
- Appendix A. Coherence
- Problems
- References
- Index.
- 2. Optical pattern formation
- 2.1 The problem of imaging
- 2.2 Aerial images
- 2.3 The contribution of physics and chemistry
- 2.4 Focus
- Problems
- References.
- 3. Photoresists
- 3.1 Positive and negative resists
- 3.2 Adhesion promotion
- 3.3 Resist spin coating, softbake, and hardbake
- 3.4 Photochemistry of novolak: DNQ g- and i-line resists
- 3.5 Acid-catalyzed DUV resists
- 3.6 Development and post-exposure bakes
- 3.7 Operational characterization
- 3.8 Line edge roughness
- 3.9 Multilayer resist processes
- Problems
- References.
- 4. Modeling and thin film effects
- 4.1 Models of optical imaging
- 4.2 Aberrations
- 4.3 Modeling photochemical reactions
- 4.4 Thin film optical effects
- 4.5 Post-exposure bakes
- 4.6 Methods for addressing the problems
- of reflective substrates
- 4.7 Development
- Problems
- References.
- 5. Wafer steppers
- 5.1 Overview
- 5.2 Light sources
- 5.3 Illumination systems
- 5.4 Reduction lenses
- 5.5 Autofocus systems
- 5.6 The wafer stage
- 5.7 Scanning
- 5.8 Dual-stage exposure tools
- Problems
- References.
- 6. Overlay
- 6.1 Alignment systems
- 6.1.1 Classification of alignment systems
- 6.1.2 Optical methods for alignment and
- wafer-to-reticle referencing
- 6.1.3 Number of alignment marks
- 6.2 Overlay models
- 6.3 Matching
- 6.4 Process-dependent overlay effects
- Problems
- References.
- 7. Masks and reticles
- 7.1 Overview
- 7.2 Mask blanks
- 7.3 Mechanical optical-pattern generators
- 7.4 Electron beam lithography and mask writers
- 7.5 Optical mask writers
- 7.6 Resists for mask making
- 7.7 Etching
- 7.8 Pellicles
- Problems
- References.
- 8. Confronting the diffraction limit
- 8.1 Off-axis illumination
- 8.2 Optical proximity effects
- 8.3 The mask error factor
- 8.4 Phase-shifting masks
- Problems
- References.
- 9. Metrology
- 9.1 Linewidth measurement
- 9.1.1 Linewidth measurement using
- scanning electron microscope
- 9.1.2 Scatterometry
- 9.1.3 Electrical linewidth measurement
- 9.2 Measurement of overlay
- References.
- Preface
- 1. Overview of lithography
- Problems.