Fundamental Aspects of Silicon Oxidation /
This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on the incorporation of oxygen into the...
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| Format: | eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
2001.
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| Series: | Springer series in materials science ;
46. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- 1. Introduction
- 2. Morphological Aspects of Silicon Oxidation in Aqueous Solutions
- 3. Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation
- 4. Oxidation of H-Terminated Silicon
- 5. Layer-by-Layer Oxidation of Si(001) Surfaces
- 6. Atomic Dynamics During Oxidation
- 7. First Principles Quantum Chemical Investigations of Silicon Oxidation
- 8. Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation
- 9. Ion Beam Studies of Silicon Oxidation and Oxynitridation
- 10. Local and Global Bonding at the Si-SiO2 Interface
- 11. Evolution of the Interfacial Electronic Structure During Thermal Oxidation
- 12. Structure and Energetics of the Interface Between Si and Amorphous SiO2.