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Ion implantation : basics to device fabrication /

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Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular...

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Bibliographic Details
Main Author: Rimini, E.
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Boston : Kluwer Academic Publishers, [1995]
Series:Kluwer international series in engineering and computer science ; SECS 293.
Kluwer international series in engineering and computer science. Electronic materials, science and technology.
Subjects:
Ion implantation.
Semiconductor doping.
Semiconductors > Design and construction.
Ionenimplantation.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • 1 Semiconductor Devices
  • 1.1 Introduction
  • 1.2 Semiconductor Physics
  • 1.3 p-n Junction and Diode
  • 1.4 Unipolar and Bipolar Transistors
  • 1.5 Ion Implantation and Semiconductor Devices
  • 1.6 Damage and Yield
  • 1.7 Future Trend
  • 2 Ion Implanters
  • 2.1 Introduction
  • 2.2 Ion Sources
  • 2.3 High Energy Implanters
  • 2.4 Magnetic Analyzer and Beam Transport
  • 2.5 Energy Contamination
  • 2.6 Scan System and Current Measurement
  • 2.7 Wafer Cooling
  • 2.8 Wafer Charging
  • 2.9 Uniformity Control and Mapping
  • 2.10 Contaminants and Yield
  • 2.11 Plasma Immersion Ion Implantation
  • 3 Range Distribution
  • 3.1 Introduction
  • 3.2 Elastic Stopping Power
  • 3.3 Electronic Energy Loss
  • 3.4 Depth Profile of Implanted Ions
  • 3.5 Penetration Anomalies
  • 3.6 Channeling Implants
  • 3.7 Lateral Spreading
  • 3.8 Simulation of Range Distribution
  • 4 Radiation Damage
  • 4.1 Introduction
  • 4.2 Collision Cascade
  • 4.3 Damage Distribution
  • 4.4 Crystalline Defects
  • 4.5 Primary Defects
  • 4.6 Hot Implants
  • 4.7 Ion Beam Induced Enhanced Crystallization
  • 4.8 Ion Implantation into Localized Si Areas
  • 5 Annealing and Secondary Defects
  • 5.1 Introduction
  • 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon
  • 5.3 Annealing of Low-Dose Heavy - Ion Implant
  • 5.4 Regrowth of Amorphous Layer Under a Mask
  • 5.5 Annealing of Heavily Disordered Regions
  • 5.6 Rapid Thermal Processing
  • 5.7 Impurity Diffusion During Annealing
  • 5.8 Interaction of Impurities with Ion Implanted Defects
  • 5.9 Defect Engineering
  • 6 Analytical Techniques
  • 6.1 Introduction
  • 6.2 Secondary Ion Mass Spectrometry
  • 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses
  • 6.4 Carrier and Mobility Profiles
  • 6.5 Rutherford Backscattering and Channeling Effect
  • 6.6 Transmission Electron Microscopy
  • 7 Silicon Based Devices
  • 7.1 Introduction
  • 7.2 Threshold Voltage Control in MOSFET
  • 7.3 Short Channel Effects
  • 7.4 Shallow Junctions
  • 7.5 Complementary MOS Devices and Technology
  • 7.6 Lifetime Engineering in Power Devices
  • 7.7 High Energy Implant Applications
  • 7.8 High-Speed Bipolar Transistors
  • 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis
  • 8.1 Introduction
  • 8.2 Ion Implantation in GaAs
  • 8.3 Ion Implantation in InP
  • 8.4 Isolation of III-V Semiconductors
  • 8.5 Isolation of Superlattice and Quantum Well Structures
  • 8.6 Synthesis of Buried Dielectric
  • 8.7 Devices in SOI Substrates
  • 8.8 Buried Metal Layer Formation
  • 8.9 Compound Semiconductor Based Devices
  • Selected References
  • References.