Cover Image

Electrical characterization of silicon-on-insulator materials and devices /

Show other versions (1)

Electrical Characterization of Silicon-on-Insulator Materials and Devices describes a wide variety of electrical characterization methods, from wafer screening and defect identification to detailed device evaluation. Each technique comes with pertinent technical information -- experimental set-up, b...

Full description

Bibliographic Details
Main Author: Cristoloveanu, Sorin
Corporate Author: SpringerLink (Online service)
Other Authors: Li, Sheng S., 1938-
Format: eBook
Language:English
Published: Boston : Kluwer Academic, [1995]
Series:Kluwer international series in engineering and computer science ; SECS 305.
Subjects:
Semiconductors > Design and construction.
Silicon-on-insulator technology.
Semiconductors > Electric properties.
Circuitos integrados.
Semicondutores.
Semiconducteurs > Conception et construction.
Technologie silicium sur isolant.
Semiconducteurs > Propriétés électriques.
SOI-Technik.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • Preface
  • 1 Introduction
  • 1.1 Why SOI?
  • 1.2 Why Not Yet SOI?
  • 1.3 Why an SOI Book?
  • 2 Methods of Forming SOI Wafers
  • 2.1 SIMOX
  • 2.2 Wafer Bonding
  • 2.3 Zone-Melting Recrystallization
  • 2.4 Epitaxial Lateral Overgrowth
  • 2.5 Full Isolation by Porous Oxidized Silicon
  • 2.6 Silicon on Sapphire
  • 2.7 Silicon on Zirconia
  • 3 SOI Devices
  • 3.1 Advanced CMOS and Bipolar Devices
  • 3.2 Radiation-Hardened Circuits
  • 3.3 High-Voltage Devices
  • 3.4 High-Temperature Devices
  • 3.5 Low-Power Applications
  • 3.6 Three-Dimensional Devices
  • 3.7 Transducers
  • 3.8 Innovative Devices
  • 4 Wafer-Screening Techniques
  • 4.1 The Basis for Wafer Screening
  • 4.2 Surface Photovoltage
  • 4.3 Dual-Beam S-Polarized Reflectance
  • 4.4 Dual-Beam Optical Modulation
  • 4.5 Other Optical Methods
  • 4.6 Point Contact Pseudo-MOS Transistor
  • 4.7 Quick-Turnaround Capacitance
  • 4.8 Pinhole Detection
  • 4.9 Conclusion
  • 5 Transport Measurements
  • 5.1 Four-Point Probe
  • 5.2 Spreading Resistance
  • 5.3 Hall Effect and Magnetoresistance
  • 5.4 Van der Pauw Measurements
  • 5.5 Photoconductivity
  • 5.6 PICTS
  • 6 SIS Capacitor-Based Characterization Techniques
  • 6.1 Capacitance and Conductance Techniques
  • 6.2 Bias-Scan DLTS Technique
  • 6.4 Zerbst Method and Generation Lifetime
  • 6.5 MOS Capacitance Method
  • 7 Diode Measurements
  • 7.1 CurrentVoltage Measurements in a PN Diode
  • 7.2 Differential Current/Capacitance Method
  • 7.3 Gated-Diode Measurements
  • 7.4 Deep-Level Transient Spectroscopy
  • 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics
  • 9 Transistor-Based Characterization Techniques
  • List of Symbols.