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Early stages of oxygen precipitation in silicon /

While the discovery that heating oxygen-rich silicon to around 450C produces electrically active defects dates back to 1954, the details of the processes by which the donors and other defects are generated remain obscure today. The fact that there is only one oxygen atom in about ten thousand silico...

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Bibliographic Details
Corporate Authors: SpringerLink (Online service), North Atlantic Treaty Organization. Scientific Affairs Division, NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Silicon
Other Authors: Jones, R., Ph. D.
Format: Conference Proceeding eBook
Language:English
Published: Dordrecht ; Boston : Kluwer Academic, [1996]
Series:NATO ASI series. High technology ; vol. 17.
Subjects:
Silicon crystals > Defects > Congresses.
Silicon > Oxygen content > Congresses.
Semiconductors > Defects.
Silicium > Teneur en oxygène > Congrès.
Silicium cristallisé > Défauts > Congrès.
Semiconducteurs > Défauts > Congrès.
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Call Number: QC611.8.S5 E27 1996eb
 
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