Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices /

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue...

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Bibliographic Details

Main Author:	Garfunkel, Eric
Corporate Author:	SpringerLink (Online service)
Other Authors:	Gusev, Evgeni, Vul', Alexander
Format:	eBook
Language:	English
Published:	Dordrecht : Springer Netherlands : Imprint : Springer, 1998.
Series:	NATO science series. High technology ; 47.
Subjects:	Optical materials. Surfaces (Physics) Electronic books.
Online Access:	Connect to the full text of this electronic book