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Advances in scanning probe microscopy /

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This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future si...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Sakurai, T. (Toshio), 1945-, Watanabe, Y. (Yousuke), 1938-
Format: eBook
Language:English
Published: Berlin ; New York : Springer, [2000]
Series:Advances in materials research ; 2.
Subjects:
Scanning probe microscopy.
Rastersondenmikroskopie.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • Theory of Scanning Probe Microscopy
  • First-Principles Electronic Structure Theory for Semiconductor Surfaces
  • Atomic Structure of 6H-SiC
  • Application of Atom Manipulation for Fabricating Nanoscale and Atomic-scale Structures on Si Surfaces
  • Theoretical Insights into Fullerenes Absorbed on Surfaces: Comparison with STM Studies
  • Apparent Barrier Height and Barrier-Height Imaging of Surfaces
  • Mesoscopic Work Function Measurement by Scanning Tunneling Microscope
  • Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces
  • Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Microscopy.