Gate dielectrics and MOS ULSIs : principles, technologies, and applications /

Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integrat...

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Bibliographic Details

Main Author:	Hori, Takashi, 1956-
Corporate Author:	SpringerLink (Online service)
Format:	eBook
Language:	English
Published:	Berlin ; New York : Springer, [1997]
Series:	Springer series in electronics and photonics ; v. 34.
Subjects:	Integrated circuits > Ultra large scale integration. Dielectric devices. Metal oxide semiconductors. Silicon-on-insulator technology. Dispositifs diélectriques. Circuits intégrés à grande échelle. MOS (électronique) Technologie silicium sur isolant. Electronic books.
Online Access:	Connect to the full text of this electronic book