Pulsed capacitance measurement of silicon carbide (SiC) Schottky diode and SiC metal oxide semiconductor /

Bibliographic Details

Main Author:	Griffin, Timothy E.
Corporate Author:	U.S. Army Research Laboratory
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [2006]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 3993.
Subjects:	Pulsed power systems. Diodes, Schottky-barrier. Metal oxide semiconductors.
Online Access:	https://purl.fdlp.gov/GPO/LPS125608