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Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching /

Bibliographic Details
Main Author: Semendy, Fred
Corporate Author: U.S. Army Research Laboratory
Other Authors: Boyd, Phillip, Lee, Unchul
Format: Government Document eBook
Language:English
Published: Adelphi, MD : Army Research Laboratory, [2004]
Series:ARL-TR (Aberdeen Proving Ground, Md.) ; 3370.
Subjects:
Plasma etching.
Gallium nitride.
Online Access:https://purl.fdlp.gov/GPO/LPS125009
Description
Item Description:Title from PDF title screen (viewed on Aug. 10, 2010).
"November 2004."
Electronic resource.
Physical Description:1 online resource (iv, 15 pages) : illustrations (chiefly color), color charts.
Bibliography:Includes bibliographical references (pages 11-12).