Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching /

Bibliographic Details

Main Author:	Semendy, Fred
Corporate Author:	U.S. Army Research Laboratory
Other Authors:	Boyd, Phillip, Lee, Unchul
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [2004]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 3370.
Subjects:	Plasma etching. Gallium nitride.
Online Access:	https://purl.fdlp.gov/GPO/LPS125009