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Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C /

Bibliographic Details
Main Author: Niedra, Janis M.
Corporate Authors: NASA Glenn Research Center, International Energy Conversion Engineering Conference
Other Authors: Schwarze, Gene E.
Format: Government Document Conference Proceeding eBook
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
Series:NASA technical memorandum ; 213996.
Subjects:
Static characteristics.
Silicon carbides.
Transistors.
Switching.
Electric potential.
P-n junctions.
Online Access:https://purl.fdlp.gov/GPO/gpo2661
Description
Item Description:Title from title screen (viewed on Jan. 3, 2011).
"December 2005."
"AIAA-2005-5718."
Electronic resource.
Physical Description:1 online resource (9 pages) : illustrations
Bibliography:Includes bibliographical references (page 9).