Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C /

Bibliographic Details

Main Author:	Niedra, Janis M.
Corporate Authors:	NASA Glenn Research Center, International Energy Conversion Engineering Conference
Other Authors:	Schwarze, Gene E.
Format:	Government Document Conference Proceeding eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
Series:	NASA technical memorandum ; 213996.
Subjects:	Static characteristics. Silicon carbides. Transistors. Switching. Electric potential. P-n junctions.
Online Access:	https://purl.fdlp.gov/GPO/gpo2661