Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C /

Bibliographic Details

Main Author:	Niedra, Janis M.
Corporate Author:	NASA Glenn Research Center
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006]
Series:	NASA contractor report ; NASA CR-214257.
Subjects:	Junction transistors. High temperature. Bipolar transistors. Switching. Static loads. Electric potential.
Online Access:	https://purl.fdlp.gov/GPO/LPS126907