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Transient-induced latchup in CMOS integrated circuits /

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Bibliographic Details
Main Author: Ker, Ming-Dou
Other Authors: Hsu, Sheng-Fu
Format: Book
Language:English
Published: Singapore ; Hoboken, NJ : [Piscataway, N.J.] : Wiley ; IEEE Press, [2009]
Subjects:
Metal oxide semiconductors, Complementary > Defects.
Metal oxide semiconductors, Complementary > Reliability.

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Call Number: TK7871.99.M44 K47 2009
 
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TK7871.99.M44 K47 2009 Available